MRAM with novel shaped cell using synthetic anti-ferromagnetic free layer

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345371

Y. Ha, J. Lee, H. Kim, J. Bae, S.C. Oh, K. Nam, S.O. Park, N. Lee, H. Kang, U. Chung, J. Moon

引用次数: 16

Abstract

Magnetic random access memory (MRAM) with magnetic tunnel junction (MTJ) using synthetic anti-ferromagnetic (SAF) free layers of various shapes has been developed. SAF free layers show the predominance in the scalability compared with a conventional single free layer. It is also revealed that a novel shaped MTJ with a SAF free layer has a remarkably large writing margin.

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采用合成抗铁磁自由层的新型异形单元MRAM

磁性隧道结磁随机存取存储器(MRAM)采用不同形状的合成反铁磁层(SAF)制成。与传统的单层自由层相比，SAF自由层在可扩展性方面具有优势。研究还发现，一种新型的无SAF层的MTJ具有非常大的书写边距。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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