A 275GHz to 296GHz Power Amplifier Using Embedding Network in 65nm-CMOS with 29.4dB Peak Power Gain

Abstract

This paper reports the design and simulation of 275GHz to 296GHz power amplifier employing embedding linear lossless reciprocity (LLR) network to boost maximum available gain to maximum achievable gain in 65nm CMOS process. The LLR network is realized by an inductor between the gate and drain of the transistor. The final simulation results show that the gain is greater than lOdB from 275GHz to 296GHz, and reaches a 29.4dB peak at 275GHz. And at 275GHz, saturated output power is -ldBm, IdB compression point of output power is -3.5dBm.