Ultra low-k integration solutions using GCIB processing

Abstract

Integration of porous low-k materials for interconnect technology at the 45nm node presents many challenges to etch, ash and cleans processes. Dry processing with a gas cluster ion beam (GCIB) employs a highly energetic beam of loosely bound atomic or molecular clusters. We will show the ability of GCIB to pore seal, etch and ash p-MSQ features, while minimizing low-k film damage as compared to traditional plasma processes.