Gate dielectric dependent performance of GNR MOSFET: A tight binding study

Abstract

This paper presents the gate oxide dielectric strength and its thickness-dependent performance of a graphene nanoribbon MOSFET (GNRMOSFET). Here we have studied the transfer characteristics, on/off current (ION/IOFF) ratio, subthreshold slope and drain induced barrier lowering (DIBL) of the device using Non Equilibrium Greens Function (NEGF) formalism in tight binding frameworks. The results are obtained by solving the NEGF and Poisson's equation self-consistently in NanoTCAD ViDES environment and found to have strong dependence on the oxide thickness as well as its dielectric strength.