Model for electrical simulation of photogate active pixel sensor

B. Casadei, Y. Hu, C. Dufaza, L. Martín
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引用次数: 1

Abstract

A new electrical simulation model for photogate active pixel sensor in CMOS imagers is proposed. Review of three conventional models is done and shows lack of accuracy. Therefore photoelectric mechanisms and charges transfer of photogate pixel are analysed and lead to the definition of a Verilog-A description model. This model is then simulated into the Cadence design tool environment and simulation results show great improvements in simulation accuracy of the proposed model versus others ones.
光门有源像素传感器的电学仿真模型
提出了一种新的CMOS成像仪中光门有源像素传感器的电学仿真模型。对三种传统模型进行了回顾,发现它们缺乏准确性。因此,分析了光电机制和光电门像素的电荷转移,并定义了Verilog-A描述模型。然后在Cadence设计工具环境中对该模型进行了仿真,仿真结果表明该模型的仿真精度比其他模型有很大提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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