Chetan Kamble, K. SiddharthR., Shivnarayan Patidar, M. H. Vasantha, Nithin Y. B. Kumar
{"title":"Design of Area-Power-Delay Efficient Square Root Carry Select Adder","authors":"Chetan Kamble, K. SiddharthR., Shivnarayan Patidar, M. H. Vasantha, Nithin Y. B. Kumar","doi":"10.1109/ises.2018.00026","DOIUrl":null,"url":null,"abstract":"This work proposes a simple and efficient way of designing a Square-root Carry Select Adder (SQRT-CSLA). The transistor-level modification in the Carry Select Adder (CSLA) significantly reduces the hardware complexity and power dissipation. Based on this modification, an 8-bit, 16-bit, 32-bit and 64-bit Square-root CSLA architecture is designed. The proposed design is simulated at a transistor level in a 180 nm, CMOS technology with a supply voltage of 1.8 V. The proposed design is able to achieve 30% reduction in Power-Delay Product (PDP) compared to the existing architectures.","PeriodicalId":447663,"journal":{"name":"2018 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)","volume":"191 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ises.2018.00026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work proposes a simple and efficient way of designing a Square-root Carry Select Adder (SQRT-CSLA). The transistor-level modification in the Carry Select Adder (CSLA) significantly reduces the hardware complexity and power dissipation. Based on this modification, an 8-bit, 16-bit, 32-bit and 64-bit Square-root CSLA architecture is designed. The proposed design is simulated at a transistor level in a 180 nm, CMOS technology with a supply voltage of 1.8 V. The proposed design is able to achieve 30% reduction in Power-Delay Product (PDP) compared to the existing architectures.