Reliability analysis and electrical characterization of a Class-E resonant inverter

M. Catelani, L. Ciani, A. Reatti, F. Corti, V. Sorrentino, A. Ayachit, M. Kazimierczuk
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引用次数: 5

Abstract

One of the most interesting challenges in power electronics is increasing the circuit reliability. This can be achieved by reducing the power losses and, therefore, increasing the power conversion efficiency. Conduction and switching losses in power MOSFETs are the major contributions to the converter overall power loss, which becomes a serious problem in high-power conversion applications. Resonant converters, which represent an interesting solution to reduce switching losses, are based on a resonant tank composed of inductors and capacitors tuned to resonate at a specific frequency. The resonance forms the voltage and/or current waveforms so that, under optimal conditions, the MOSFET turns on at zero-voltage switching (ZVS) and zero-derivative switching (ZCS). This drastically reduces the switching losses. Also, new semiconductor materials such as SiC or GaN are capable to operate at an increased switching frequency and reduced both conduction and switching losses. In this paper, the reliability of a Class-E resonant inverter is analyzed to identify the most critical elements of the circuit. The reliability prediction has been carried out based on MIL-HDBK-217 handbook. The Mean Time Between Failures (MTBF) and the failure rate λp are derived. Voltage and current values of all components utilized in this analysis are based on data achieved by experimental results.
e类谐振逆变器的可靠性分析与电学特性
电力电子领域最有趣的挑战之一是提高电路的可靠性。这可以通过减少功率损耗,从而提高功率转换效率来实现。功率mosfet的导通和开关损耗是变换器总功率损耗的主要来源,在大功率转换应用中已成为一个严重的问题。谐振变换器是减少开关损耗的一种有趣的解决方案,它基于一个由电感和电容器组成的谐振槽,该谐振槽可以在特定频率上谐振。谐振形成电压和/或电流波形,因此,在最佳条件下,MOSFET在零电压开关(ZVS)和零导数开关(ZCS)下导通。这大大减少了开关损耗。此外,新的半导体材料,如SiC或GaN能够在更高的开关频率下工作,并降低传导和开关损耗。本文对e类谐振逆变器的可靠性进行了分析,找出了电路中最关键的元件。基于MIL-HDBK-217手册进行了可靠性预测。导出了平均无故障时间(MTBF)和故障率λp。本分析中使用的所有元件的电压和电流值都是基于实验结果获得的数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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