The permeability of ferrite plated films

P. J. van der Zaag, P. Lubitz, Y. Kitamoto, M. Abe
{"title":"The permeability of ferrite plated films","authors":"P. J. van der Zaag, P. Lubitz, Y. Kitamoto, M. Abe","doi":"10.1109/INTMAG.1999.837745","DOIUrl":null,"url":null,"abstract":"Recently, there has been a growing interest in the fabrication of ferrite films, especially by pulsed laser deposition (PLD), e.g [I], but also by sputtering, see for instance [Z]. Owing to their insulating character ferrite films could be applied for integrated inductors 111 or to improve the efficiency of thin film recording heads 131. Most of the studies of the growth of ferrite films, thus far, only report the saturation magnetization value, Ms, or the coercivity, He. However, in mast applicatons the permeability of the ferrite films is the key parameter, which unfortunately is rarely reported [2]. A disadvantage of the films grown by PLD or sputtering is that they require a high deposition temperature of typically around 650 'C, which is too high for most application in devices which involve other thin layers. Ferrite films grown by ferrite plating offer a much more favourable depostion temperature of only 80 'C [4]. We will discuss the characterization of the magnetic properties, notably permeability's of NiZn-ferrite plated films. The approx. 1 pm thick NiZn-ferrite films studied had a Ms % 520 kA/m which is comparable to bulk values for NiZn-ferrite. As can be seen from Fig. 1, the NiZn-ferrite films grown by ferrite plating on a glass substrate have a p = 28 f 3 (open balls). This value can be increased to p= 60 *5 hy an anneal step at T 2 325 OC, which in addition increases","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"40 1-8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Magnetics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTMAG.1999.837745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Recently, there has been a growing interest in the fabrication of ferrite films, especially by pulsed laser deposition (PLD), e.g [I], but also by sputtering, see for instance [Z]. Owing to their insulating character ferrite films could be applied for integrated inductors 111 or to improve the efficiency of thin film recording heads 131. Most of the studies of the growth of ferrite films, thus far, only report the saturation magnetization value, Ms, or the coercivity, He. However, in mast applicatons the permeability of the ferrite films is the key parameter, which unfortunately is rarely reported [2]. A disadvantage of the films grown by PLD or sputtering is that they require a high deposition temperature of typically around 650 'C, which is too high for most application in devices which involve other thin layers. Ferrite films grown by ferrite plating offer a much more favourable depostion temperature of only 80 'C [4]. We will discuss the characterization of the magnetic properties, notably permeability's of NiZn-ferrite plated films. The approx. 1 pm thick NiZn-ferrite films studied had a Ms % 520 kA/m which is comparable to bulk values for NiZn-ferrite. As can be seen from Fig. 1, the NiZn-ferrite films grown by ferrite plating on a glass substrate have a p = 28 f 3 (open balls). This value can be increased to p= 60 *5 hy an anneal step at T 2 325 OC, which in addition increases
铁氧体镀膜的磁导率
最近,人们对铁氧体薄膜的制造越来越感兴趣,特别是通过脉冲激光沉积(PLD),例如[I],但也可以通过溅射,例如[Z]。由于其绝缘特性,铁氧体薄膜可用于集成电感111或提高薄膜记录磁头131的效率。到目前为止,大多数关于铁氧体薄膜生长的研究只报道了饱和磁化值Ms或矫顽力He。然而,在大多数应用中,铁氧体薄膜的磁导率是关键参数,不幸的是很少有报道[2]。PLD或溅射生长的薄膜的缺点是它们需要很高的沉积温度,通常在650℃左右,这对于大多数涉及其他薄层的设备的应用来说太高了。通过铁氧体电镀生长的铁氧体薄膜提供了更有利的沉积温度,仅为80℃[4]。我们将讨论磁性能的表征,特别是氮化氮铁氧体镀膜的磁导率。约。所研究的1 pm厚的nizn -铁氧体薄膜的Ms % 520 kA/m与nizn -铁氧体的体积值相当。从图1可以看出,在玻璃基板上镀铁氧体生长的nizn -铁氧体薄膜具有p = 28 f3(开球)。在温度为2525℃时,该值可增加到每退火一步p= 60 *5 h,并进一步增加
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