Effect on THz Surface Plasmons of A Density Modulated Relativistic Electron Beam in A Parallel Plane Semiconducting Structure

P. Malik, Suresh C. Sharma, Rinku Sharma
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Abstract

The excitation of terahertz (THz) surface plasmons by a density modulated relativistic electron beam propagating in a parallel plane semiconducting structure is investigated. The interaction of the electromagnetic surface wave with density modulated electron beam in the guiding structure is examined in the present work, which shows a significant enhancement in the radiation wave. The growth rate of the instability increases linearly with modulation index and reaches the largest value when the phase matching condition is satisfied in the generation of THz radiation wave, i.e., when the phase velocity of the THz radiation wave is comparable to the velocity of modulated beam. In addition, the growth rate of instability scales as one-third power of beam current and modulation index. Moreover,the surface plasmons resonance can be tuned in THz frequency range by the conventional doping concentration of the semiconductors.
平行平面半导体结构中密度调制相对论电子束对太赫兹表面等离子体的影响
研究了密度调制的相对论电子束在平行平面半导体结构中对太赫兹(THz)表面等离子体的激发。本文研究了导结构中电磁表面波与密度调制电子束的相互作用,结果表明电磁表面波在导结构中有明显的增强。不稳定性的增长率随调制指数线性增加,当太赫兹辐射波的产生满足相位匹配条件时,即太赫兹辐射波的相速度与调制波束的速度相当时,不稳定性的增长率达到最大值。此外,不稳定性的增长率随光束电流和调制指数的三分之一幂而增加。此外,通过常规的半导体掺杂浓度可以将表面等离子体共振调谐到太赫兹频率范围内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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