Investigation of niobium nanoSQUIDs based on nanobridge junctions

Xueshen Wang, Tianyi Li, D. Cox, J. Gallop, Jinjin Li, Y. Zhong, W. Cao, Q. Zhong, Zhun Li, Mingyu Zhang, L. Hao
{"title":"Investigation of niobium nanoSQUIDs based on nanobridge junctions","authors":"Xueshen Wang, Tianyi Li, D. Cox, J. Gallop, Jinjin Li, Y. Zhong, W. Cao, Q. Zhong, Zhun Li, Mingyu Zhang, L. Hao","doi":"10.1109/CPEM.2016.7540718","DOIUrl":null,"url":null,"abstract":"NanoSQUIDs with Dayem nanobridge weak-link junctions were fabricated on single layer niobium film by focus ion beam(FIB) milling. The dimension of the nanobridge is less than 60 nm and the loop scale is from 400×400 nm to 2.5×20 μm. The working temperature range for this device was researched. The voltage-flux transfer properties were measured at different working temperatures.","PeriodicalId":415488,"journal":{"name":"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)","volume":"274 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CPEM.2016.7540718","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

NanoSQUIDs with Dayem nanobridge weak-link junctions were fabricated on single layer niobium film by focus ion beam(FIB) milling. The dimension of the nanobridge is less than 60 nm and the loop scale is from 400×400 nm to 2.5×20 μm. The working temperature range for this device was researched. The voltage-flux transfer properties were measured at different working temperatures.
基于纳米桥结的铌纳米squid研究
采用聚焦离子束(FIB)铣削技术在单层铌薄膜上制备了具有Dayem纳米桥弱连接结的纳米鱿鱼。纳米桥的尺寸小于60 nm,环路尺度为400×400 nm ~ 2.5×20 μm。研究了该装置的工作温度范围。测试了不同工作温度下的电压-磁通传递特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信