Diffused spiral junction termination structure: modeling and realization

D. Križaj, S. Amon, G. Charitat
{"title":"Diffused spiral junction termination structure: modeling and realization","authors":"D. Križaj, S. Amon, G. Charitat","doi":"10.1109/ISPSD.1996.509492","DOIUrl":null,"url":null,"abstract":"An innovative junction termination structure for efficient improvement of planar pn junction breakdown properties is studied. It is composed of a high-resistivity layer, connected to the anode junction and winding around it in a spiral fashion. Leakage current through the diffused resistor results in the spread of potential along the spiral resistor and reduction of high electric field at the junction curvature region. An optimized design with decaying spiral width and increasing spacing between the spiral turns leads to close to ideal breakdown voltages as confirmed by device modeling as well as experimental results.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"531 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509492","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

An innovative junction termination structure for efficient improvement of planar pn junction breakdown properties is studied. It is composed of a high-resistivity layer, connected to the anode junction and winding around it in a spiral fashion. Leakage current through the diffused resistor results in the spread of potential along the spiral resistor and reduction of high electric field at the junction curvature region. An optimized design with decaying spiral width and increasing spacing between the spiral turns leads to close to ideal breakdown voltages as confirmed by device modeling as well as experimental results.
扩散螺旋结终端结构:建模与实现
研究了一种改进平面pn结击穿性能的新型结端结构。它由一个高电阻率层组成,连接到阳极结,并以螺旋方式缠绕在阳极结周围。漏电流通过扩散电阻导致电位沿螺旋电阻扩散,结曲率区域的高电场减小。采用螺旋宽度衰减、螺旋匝间距增大的优化设计,击穿电压接近理想,器件建模和实验结果均证实了这一点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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