Comparison of wafer bonding methods of membrane GaInAsP wired waveguides on Si substrate

2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI:10.1109/INOW.2008.4634549

H. Enomoto, Hai Duc Nguyen, K. Inoue, S. Sakamoto, T. Okumura, N. Nishiyama, S. Kondo, S. Arai

引用次数: 0

Abstract

SiO₂/SiO₂ direct wafer bonding and BCB bonding have been compared to realize membrane GalnAsP wired waveguides on Si Substrate. Bonding environment and pressure were essential for BCB bonding and SiO₂ direct bonding, respectively.

查看原文本刊更多论文

硅衬底上薄膜GaInAsP有线波导晶圆键合方法的比较

比较了SiO2/SiO2直接键合和BCB键合在硅衬底上实现薄膜GalnAsP有线波导的方法。BCB键合和SiO2直接键合的关键分别是键合环境和压力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2008 International Nano-Optoelectronics Workshop

自引率

0.00%

发文量