Picosecond Photoluminescence and Energy-Loss Rates in GaAs Quantum Wells under High-Density Excitation

Abstract

Several features of the luminescence from the GaAs/AlGaAs semiconductors with quantum well structures have been extensively studied. Among the features studied the relaxation mechanism of hot carriers in quantum wells are still controversial among the studies at the present stage. The investigation of the relaxation process must be performed in order to clarify the essential mechanisms of excellent characteristics of laser oscillation such as the reduction of threshold current and the control of lasing over wide wavelength region.