G. Vandersteen, P. Wambacq, S. Donnay, F. Verbeyst
{"title":"High-frequency nonlinear amplifier model for the efficient evaluation of inband distortion under nonlinear load-pull conditions","authors":"G. Vandersteen, P. Wambacq, S. Donnay, F. Verbeyst","doi":"10.1109/ARFTG.2001.327501","DOIUrl":null,"url":null,"abstract":"Designing complex analog systems needs different abstraction levels to reduce the overall complexity. The required level of abstraction depends on the accuracy and the purpose of the model. High-frequency amplifier models can vary from simple transfer functions for efficient bit-error-rate analysis up to detailed transistor level descriptions for accurate load-pull prediction. This paper introduces a nonlinear black-box model for high-frequency amplifiers. It extends the linear S-parameter representation to enable both efficient system-level simulations and load-pull prediction. Both are demonstrated on the measurements of a high-frequency amplifier excited using a WLAN - OFDM modulation.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"58th ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2001.327501","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Designing complex analog systems needs different abstraction levels to reduce the overall complexity. The required level of abstraction depends on the accuracy and the purpose of the model. High-frequency amplifier models can vary from simple transfer functions for efficient bit-error-rate analysis up to detailed transistor level descriptions for accurate load-pull prediction. This paper introduces a nonlinear black-box model for high-frequency amplifiers. It extends the linear S-parameter representation to enable both efficient system-level simulations and load-pull prediction. Both are demonstrated on the measurements of a high-frequency amplifier excited using a WLAN - OFDM modulation.