Testability analysis of CMOS ternary circuits

C. Rozon, H. Mouftah
{"title":"Testability analysis of CMOS ternary circuits","authors":"C. Rozon, H. Mouftah","doi":"10.1109/ISMVL.1991.130722","DOIUrl":null,"url":null,"abstract":"The testability of ternary CMOS gates was examined in order to find suitable test vectors to detect stuck-at, stuck-open, and stuck-short faults. A two-level fault model approach was used: a transistor-by-transistor model for low component count operators and a gate-level model for large component count operators. Results are given in a tabular format for each gate. Since these ternary CMOS circuits operate on the set (0,1,2) compared to similar CMOS binary circuits which operate on the set","PeriodicalId":127974,"journal":{"name":"[1991] Proceedings of the Twenty-First International Symposium on Multiple-Valued Logic","volume":"143 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings of the Twenty-First International Symposium on Multiple-Valued Logic","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.1991.130722","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The testability of ternary CMOS gates was examined in order to find suitable test vectors to detect stuck-at, stuck-open, and stuck-short faults. A two-level fault model approach was used: a transistor-by-transistor model for low component count operators and a gate-level model for large component count operators. Results are given in a tabular format for each gate. Since these ternary CMOS circuits operate on the set (0,1,2) compared to similar CMOS binary circuits which operate on the set
CMOS三元电路的可测试性分析
为了找到合适的测试向量来检测卡通、卡开和卡短故障,研究了三元CMOS门的可测试性。采用两级故障模型方法:低元件数算符采用晶体管级故障模型,大元件数算符采用门级故障模型。每个门的结果以表格形式给出。因为与类似的CMOS二进制电路相比,这些三元CMOS电路在集合(0,1,2)上操作
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信