Noise characteristics of GaInP/GaAs HBT at 29 GHz

Abstract

A characterization of bias and emitter periphery-to-area ratio (Pe/Ae) of GaInP/GaAs HBT at 29 GHz is presented. The measured data of fmax, ft, Fmin, associated gain (Ga) and noise measure (NM) for four transistors were obtained. It is shown that the larger periphery-to-area ratio of the emitter, Pe/Ae, the lower the Fmin with a minimum. The best transistor, an array of twenty 2×2 μm2, had Fmin=2.81 dB, Ga = 4.9dB and NM=1.35.