Responses of radiation-hardened power MOSFETs to neutrons

2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588) Pub Date : 2001-07-16 DOI:10.1109/REDW.2001.960465

J. E. Gillberg, D. I. Burton, J. Titus, C. Wheatley, N. Hubbard

引用次数: 5

Abstract

The test results of recent neutron irradiations performed on a variety of radiation-hardened power MOSFETs manufactured by Fairchild Semiconductor are reported here. Twelve device types from four different families with rated drain breakdown voltages from 30 to 500 volts of which most are n-channels and the others are p-channels, were characterized.

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辐射强化功率mosfet对中子的响应

本文报告了仙童半导体公司生产的各种辐射硬化功率mosfet的最新中子辐照测试结果。对额定漏极击穿电压为30 ~ 500伏的4个不同系列的12种器件进行了表征，其中大多数为n通道，其余为p通道。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588)

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