Design and Analysis of 4*4-Bit Vedic Multiplier with 32nm CNFET Technology

Ritik Gupta, Rohit Ghughtyal, Sai Prateek Mahapatra, Sonali Singh
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Abstract

Carbon Nanotubes Field Effect Transistors (CNFETs) have shown numerous advantages over conventional Metal Oxide Semiconductor FETs (MOSFETs) and CMOS in terms of decreased short channel effect, lower power consumption and high performance. As the transistor channel length shortens to below 10 nm in length, short channel effects, such as drain-induced barrier lowering and velocity saturation, becomes prominent, which negatively impact transistor performance and reliability. As CNFETs do not show scaling issues, CNFETs based digital circuit designs, such as adder and multiplier, can possibly show better results in terms of power consumption and propagation delay. Multiplication operation is a crucial operation whose application ranges from computing convolution to fast fourier transform. Hence, it is important to have an efficient architecture and high-performance multiplier. Array multipliers, Wallace and Booth’s multipliers are some of the existing multipliers. One approach to perform high-performance multiplication is through the Vedic Multiplier, whose algorithm reduces delay and power consumption. Many of the pre-existing Vedic multipliers implementations techniques such as MUX based adder, Carry select adder, Hybrid 13T Full Adder rely on CMOS technology for their implementation which brings the challenges like short channel effect while scaling of CMOS transistors. Because CNFETs do not show scaling issues the performance of Vedic multiplier can be improved using CNFETs. This paper proposes a 4*4-bit Vedic Multiplier using 32nm CNFET Technology. The proposed implementation is simulated using HSPICE simulation tool, CosmosScope (cscope) software and Stanford CNFET Model file. The delay and power consumption parameters are measured for various supply voltages. Moreover, the comparative analysis of the aforementioned parameters has also been done by changing the chirality of the transistors.
采用32nm CNFET技术的4*4位Vedic倍频器设计与分析
碳纳米管场效应晶体管(cnfet)在减少短通道效应、降低功耗和高性能方面比传统的金属氧化物半导体场效应晶体管(mosfet)和CMOS具有许多优点。随着晶体管沟道长度缩短至10nm以下,漏极势垒降低和速度饱和等短沟道效应变得突出,对晶体管的性能和可靠性产生负面影响。由于cnfet不存在缩放问题,基于cnfet的数字电路设计,如加法器和乘法器,可能在功耗和传播延迟方面表现出更好的结果。乘法运算是一个重要的运算,其应用范围从计算卷积到快速傅里叶变换。因此,拥有高效的体系结构和高性能乘法器非常重要。阵列乘法器,华莱士和布斯的乘法器是一些现有的乘法器。执行高性能乘法的一种方法是通过Vedic Multiplier,其算法可以减少延迟和功耗。许多现有的吠陀乘法器实现技术,如基于MUX的加法器、进位选择加法器、混合13T全加法器等,都依赖于CMOS技术实现,这带来了CMOS晶体管缩放时的短通道效应等挑战。由于cnfet不存在缩放问题,因此使用cnfet可以提高Vedic乘法器的性能。本文提出了一种采用32nm CNFET技术的4*4位Vedic乘法器。利用HSPICE仿真工具、CosmosScope (cscope)软件和Stanford CNFET模型文件对所提出的实现进行了仿真。测量了不同电源电压下的延时和功耗参数。此外,还通过改变晶体管的手性对上述参数进行了比较分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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