Fabrication of a novel strained SiGe:C-channel planar 55 nm nMOSFET for high-performance CMOS

Abstract

We present for the first time tensile-strained epitaxially grown Si:C and SiGe:C channel NMOS devices compatible with a standard 50 nm CMOS process flow. Some of the advantages of this new architecture for CMOS integration are a highly retrograde channel doping profile and a suppression of boron diffusion and Oxidation Enhanced Diffusion (OED). Those properties lead to a dramatic decrease of short channel effects. Transport in the Si:C and SiGe:C inversion layers is characterized for the first time (77 K to 300 K) and the associated scattering mechanisms are identified. Finely tuned carbon concentration have a strong impact on transport properties.