Mismatch compensation in low power operational transconductance amplifiers using MIFGMOS

M. A. Lupercio, J. L. del Valle
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引用次数: 4

Abstract

The present trend on VLSI CMOS technology is to reduce the transistor switching losses by reducing the supply voltage and increasing the operational frequency, at the cost of increasing the non-idealities on the transistors. For mixed mode applications, the analog engineer must cope with these issues to design analog-to-digital converters or analog applications using nanometric CMOS devices. In this paper, a design approach based on a multiple input floating gate technology is applied to a fully differential low power, low voltage operational transconductance amplifier that allows the use of low supply voltages and reduces the mismatch of the transistors. Simulation results indicate that the use of the floating gate approach does not show any advantage to control the gain of the amplifier. However, this approach is very useful as a means to control the differential pair voltage of the proposed design, allowing an offset voltage compensation of nearly zero volts. The performance of the proposed design approach is demonstrated by considering a voltage supply bias of +/− 0.45V, by obtaining a dissipated power of 12.2 microwatts, a bandwidth of 120 kHz, and 35 dB gain. The design is performed using the Cadence design framework environment based on a 130nm technology.
基于MIFGMOS的低功率跨导运算放大器失配补偿
目前VLSI CMOS技术的发展趋势是以增加晶体管的非理想性为代价,通过降低电源电压和提高工作频率来降低晶体管的开关损耗。对于混合模式应用,模拟工程师必须处理这些问题,以设计使用纳米CMOS器件的模数转换器或模拟应用。本文提出了一种基于多输入浮栅技术的全差分低功耗、低电压跨导运算放大器的设计方法,该方法允许使用低电源电压并减少晶体管的失配。仿真结果表明,采用浮门方法对放大器的增益控制没有任何优势。然而,这种方法是非常有用的手段,以控制差分对电压提出的设计,允许近零电压补偿的失调电压。通过考虑+/−0.45V的电压偏置,获得12.2微瓦的耗散功率,120 kHz的带宽和35 dB增益,证明了所提出的设计方法的性能。该设计使用基于130nm技术的Cadence设计框架环境进行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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