Performance Analysis of FinFET device Using Qualitative Approach for Low-Power applications

Abstract

The introduction of Field Effect Transistor (FinFET) Technology played a leading contender in today microelectronics. FinFET structure allows to scale the device at sub-nanometer. Short channel effects can be suppressed by formation of ultra-thin fin in FinFET device. In this paper we compared the performance of the 20nm FinFET device by using different dielectric materials. We have considered only n-channel FinFET device. Simulation carried on the electron mobility, potential distribution, energy band of hole and electron, on-off current ratio (Ion/Ioff) and power dissipation of device with respect to the applied gate voltage. Mobility enhancement and higher current ratio (Ion/Ioff) is observed in proposed FinFET device having high k-dielectric material at lower voltage. This designed can be useful for low power applications due to low power dissipation. In high k-dielectric material, 1.41% improvement is observed in potential voltage with respect to low k- dielectric material when $\mathbf{V}_{\mathbf{gs}}$ at low voltage and 0.98% improvement is observed when $\mathbf{V}_{\mathbf{gs}}$ at high voltage. In high k- dielectric material 15% hike is observed in the energy conduction band as compared to low k-dielectric material when $\mathbf{V}_{\mathbf{gs}}$ at low voltage and 14% hike is observed when $\mathbf{v}_{\mathbf{gs}}$ at high voltage.