Inorganic Acid Doped Polyaniline Based Carbon Monoxide (Co) Sensor

M. Panigrahi, B. Adhikari
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Abstract

Simple in situ chemical oxidation method was employed to prepare different molar of HCl doped DL−PLA/PANI composites using AnHCl as precursor. Surface morphology, ATR−FTIR, UV–Visible, and band gap were studied. PANI nanowires with different diameter and smooth surface were observed for composites. The lowest direct band gap was found to be 1.68 eV for 2 (M) HCl doped DL−PLA/PANI. DC conductivity at room temperature was measured and followed the ohmic behaviour. The calculated highest DC conductivity at room temperature was found to be 0.1628 × 10−2 (S/cm) for 2 (M) HCl doped DL−PLA/PANI. Temperature variation (70−300 K) DC conductivity without magnetic field of as prepared composites was analysed using linear four probe techniques and showed semiconducting nature. The conductivity in the range of temperature (70−300 K) follows 3D VRH hopping mechanism. In kivelson model, the exponents are increased with increasing dopant concentration and was obeyed the power law. MR of the prepared DL−PLA/PANI composite films is strongly dependent on temperature, magnetic field, and concentration of HCl dopant. Negative MR is discussed in terms of a wave function−shrinkage effect on hopping conduction. In addition, we were discussed the response of carbon monoxide (CO) gas with polyaniline-based sensor materials.
无机酸掺杂聚苯胺基一氧化碳(Co)传感器
采用简单的原位化学氧化法,以AnHCl为前驱体制备了不同摩尔数的掺杂DL - PLA/PANI复合材料。研究了表面形貌、ATR - FTIR、UV-Visible和带隙。在复合材料中观察到不同直径和光滑表面的聚苯胺纳米线。发现2 (M) HCl掺杂DL−PLA/PANI的直接带隙最小为1.68 eV。在室温下测量直流电导率,并跟踪欧姆行为。2 (M) HCl掺杂DL - PLA/PANI的室温最高直流电导率为0.1628 × 10−2 (S/cm)。利用线性四探针技术分析了制备的复合材料在无磁场情况下(70 ~ 300 K)直流电导率的温度变化,并显示出半导体性质。在温度(70 ~ 300 K)范围内,导电率遵循3D VRH跳变机制。在kivelson模型中,指数随掺杂浓度的增加而增加,并服从幂律。制备的DL−PLA/PANI复合膜的MR与温度、磁场和HCl掺杂浓度密切相关。从波函数-缩窄效应的角度讨论了负磁流变。此外,我们还讨论了聚苯胺基传感器材料对一氧化碳(CO)气体的响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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