Computer Simulation of 3D Complex Material-Based Devices

Abstract

Several aspects of computer-aided modeling and simulation of 3D complex material PBG devices are discussed. Software package for simulation, analysis, design and optimization of wide variety such devices has been created. Periodic structures of doped elements responsible for complex properties of integral objects are the basis of devices. It is proposed, that complex dielectric properties (epsiv, mu) of the main part, together with specially fitted doped elements create the rest admittances (alpha and beta) of the metamaterials. The need of 3D numerical simulations and design is discussed. The method of auxiliary sources (MAS) (Zaridze et al., 2002) is applied to simulate EM field distribution in devices mentioned above