Novel MIS Al/sub 2/O/sub 3/ capacitor as a prospective technology for Gbit DRAMs

Abstract

A novel MIS-Al/sub 2/O/sub 3/ capacitor technology was developed with the low thermal budget and showed the superior dielectric characteristics, which were achieved by adopting ALD technique for the Al/sub 2/O/sub 3/ film deposition. A fully integrated 1 Gbit DRAM with MIS-Al/sub 2/O/sub 3/ capacitor was successfully worked, where storage capacitance and leakage current at 1.2 V were 30 fF/cell and 0.5 fA/cell, respectively. Moreover, the excellent dielectric characteristics were confirmed from the result that Vp for generating solid "0" 10 sec fail bit counts was measured to be 2.4 V.