<100> channel strained-SiGe p-MOSFET with enhanced hole mobility and lower parasitic resistance

Abstract

Employment of <100> channel direction in a strained-Si/sub 0.8/Ge/sub 0.2/ p-MOSFET has demonstrated the substantial amount of hole mobility enhancement as large as 25% and parasitic resistance reduction of 20% compared to a <110> strained-Si/sub 0.8/Ge/sub 0.2/ Channel p-MOSFET, which already has an advantage in mobility and the threshold voltage roll-off characteristic over the Si p-MOSFET. This result indicates that the <100> strained SiGe channel p-MOSFET is a promising and practical candidate for realizing high-speed CMOS devices under low-voltage operation.