M. Shiraishi, T. Furukawa, S. Watanabe, T. Arai, M. Mori
{"title":"Side gate HiGT with low dv/dt noise and low loss","authors":"M. Shiraishi, T. Furukawa, S. Watanabe, T. Arai, M. Mori","doi":"10.1109/ISPSD.2016.7520812","DOIUrl":null,"url":null,"abstract":"This paper presents a novel side gate HiGT (High-conductivity IGBT) that incorporates historical changes of gate structures for planar and trench gate IGBTs. Side gate HiGT has a side-wall gate, and the opposite side of channel region for side-wall gate is covered by a thick oxide layer to reduce Miller capacitance (Cres). In addition, side gate HiGT has no floating p-layer, which causes the excess Vge overshoot. The proposed side gate HiGT has 75% smaller Cres than the conventional trench gate IGBT. The excess Vge overshoot during turn-on is effectively suppressed, and Eon + Err can be reduced by 34% at the same diode's recovery dv/dt. Furthermore, side gate HiGT has sufficiently rugged RBSOA and SCSOA.","PeriodicalId":411783,"journal":{"name":"2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2016.7520812","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 32
Abstract
This paper presents a novel side gate HiGT (High-conductivity IGBT) that incorporates historical changes of gate structures for planar and trench gate IGBTs. Side gate HiGT has a side-wall gate, and the opposite side of channel region for side-wall gate is covered by a thick oxide layer to reduce Miller capacitance (Cres). In addition, side gate HiGT has no floating p-layer, which causes the excess Vge overshoot. The proposed side gate HiGT has 75% smaller Cres than the conventional trench gate IGBT. The excess Vge overshoot during turn-on is effectively suppressed, and Eon + Err can be reduced by 34% at the same diode's recovery dv/dt. Furthermore, side gate HiGT has sufficiently rugged RBSOA and SCSOA.