Microfabrication of 3D Free-Forms with Textured Surface Morphology in Monocrystalline Silicon using Grayscale Technology

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Abstract

Grayscale lithography involving a controlled polymerization of the photoresist, by a gradual modification of the exposure intensity is combined with reactive ion etching process having an etching selectivity of 1:1 (i.e. for the used photoresist and monocrystalline silicon wafer), in order to microfabricate 3D free-forms with complex geometry having a textured surface into monocrystalline silicon wafer. The microfabrication of complex 3D free-forms is exemplified by a geometry of convex micro-lens having concentric rings on its surface representing the surface texture and a concave depression at its tip. The 3D geometry is exposed in positive AZ4562 photoresist having a thickness of 3.8 µm by grayscale lithography using direct writing laser. The exposed 3D geometry in the photoresist is successfully transferred into monocrystalline silicon wafer using the optimized reactive ion etching process with a selectivity of 1:1 and an anisotropic factor close to 1 in SF6+CHF3 etching environment. The results show that the complex geometry exposed in the photoresist was successfully transferred into the silicon substrate with a pattern transferability with < 0.2 µm deviation between the convex micro-lens diameter in the exposed photoresist and the transferred geometry into silicon wafer. Therefore, the results show the efficacy of the proposed technique even for the pattern transferring of 3D microstructures having a textured surface using the proposed grayscale technology.
利用灰度技术在单晶硅中微细加工具有纹理表面形貌的三维自由曲面
灰度光刻涉及光刻胶的可控聚合,通过逐渐改变曝光强度,结合具有1:1蚀刻选择性的反应离子蚀刻工艺(即用于光刻胶和单晶硅片),以便微加工具有复杂几何形状的3D自由形状,具有纹理表面到单晶硅片。复杂三维自由形状的微加工以凸微透镜的几何形状为例,其表面具有代表表面纹理的同心圆,其尖端有凹凹。采用直写激光灰度光刻技术,在厚度为3.8µm的AZ4562正极光刻胶中曝光三维几何形状。在SF6+CHF3蚀刻环境下,优化的反应离子蚀刻工艺选择性为1:1,各向异性因子接近1,成功地将光刻胶中暴露的三维几何形状转移到单晶硅片上。结果表明,暴露在光刻胶中的复杂几何图形被成功地转移到硅衬底上,其图案可转移性在暴露光刻胶中的凸微透镜直径与转移到硅片上的几何图形之间的偏差小于0.2µm。因此,结果表明,即使对于具有纹理表面的三维微结构,使用所提出的灰度技术进行模式转移,所提出的技术也是有效的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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