PbTiO3Films from Metallo-Organic Precursors

R. Vest, Jiejie Xu
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引用次数: 6

Abstract

Ferroelectric PbTiO(3) films 0.5- to 2.0-mum thick were prepared by the metalloorganic decomposition (MOD) process using multilayer spinning with firing temperatures of 490-630 degrees C. The temperature dependence of the dielectric constant was found to be a function of the c/a ratio, which could be modified by control of either the single-layer thickness or the strength of the electric field during film preparation near the Curie temperature. The films were near theoretical density and defect-free over 2 cmx2 cm areas.
金属有机前驱体制备pbtio3薄膜
采用多层纺丝法制备了厚度为0.5 ~ 2.0 μ m的铁电PbTiO(3)薄膜,烧结温度为490 ~ 630℃。电介质常数的温度依赖关系是c/a比的函数,可以通过控制单层厚度或在居里温度附近制备薄膜时的电场强度来改变。薄膜接近理论密度,在2cmx2 cm区域内无缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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