Effect of temperature on current voltage characteristics of lattice mismatched Al/sub m/Ga/sub 1-m/N/GaN HEMTs

Parvesh, S. Pandeyb, S. Haldarc, M. Gupta, R. Gupta
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Abstract

In this paper we present an analytical model of temperature dependence of an AlGaN/GaN HEMTs. The results of the theoretical study concerning the temperature dependence of electron mobility in two dimensional electron gas (2DEG) confined at the AlGaN/GaN interface is reported. The increase in temperature results in decrease in the saturation carrier velocity in HEMTs, which in turn reduces the drain current. The effect of temperature on transconductance of device has also been studied. The results are in good agreement with the existing experimental data.
温度对晶格错配Al/sub -m/ Ga/sub -m/N/GaN hemt电流电压特性的影响
在本文中,我们提出了一个分析模型的温度依赖的AlGaN/GaN hemt。本文报道了限制在AlGaN/GaN界面的二维电子气体(2DEG)中电子迁移率温度依赖性的理论研究结果。温度升高导致hemt中饱和载流子速度降低,从而降低漏极电流。研究了温度对器件跨导的影响。所得结果与已有实验数据吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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