T. Lacrevaz, G. Houzet, David Auchère, P. Artillan, C. Bermond, B. Blampey, B. Fléchet
{"title":"Fast and robust RF characterization method of insulators used in high speed interconnects networks","authors":"T. Lacrevaz, G. Houzet, David Auchère, P. Artillan, C. Bermond, B. Blampey, B. Fléchet","doi":"10.1109/SAPIW.2018.8401670","DOIUrl":null,"url":null,"abstract":"A wide band (1 GHz–67 GHz) characterization method of insulator layers is presented. This method is well suitable for a fast, simple and accurate extraction of permittivity of insulators used in interconnects networks. Concerning losses, reto-simulations must be achieved to extract the loss tangent, due to the fact that the extraction of G/(C.ω) includes extrinsic effects. So both lossless and loss cases will be discussed. This non-destructive method and low-cost method presents strong advantages because no specific device under test, no metallic deposit and no etching are required. Measurements are performed using a coplanar GSG RF microprobe directly set down on the dielectric material to characterize.","PeriodicalId":423850,"journal":{"name":"2018 IEEE 22nd Workshop on Signal and Power Integrity (SPI)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 22nd Workshop on Signal and Power Integrity (SPI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SAPIW.2018.8401670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A wide band (1 GHz–67 GHz) characterization method of insulator layers is presented. This method is well suitable for a fast, simple and accurate extraction of permittivity of insulators used in interconnects networks. Concerning losses, reto-simulations must be achieved to extract the loss tangent, due to the fact that the extraction of G/(C.ω) includes extrinsic effects. So both lossless and loss cases will be discussed. This non-destructive method and low-cost method presents strong advantages because no specific device under test, no metallic deposit and no etching are required. Measurements are performed using a coplanar GSG RF microprobe directly set down on the dielectric material to characterize.