Gain Switching of the Broad-Stripe InAs/GaAs Quantum Dot Lasers

2020 International Conference Laser Optics (ICLO) Pub Date : 2020-11-02 DOI:10.1109/ICLO48556.2020.9285501

E. Cherotchenko, V. Dudelev, A. S. Shkol’nik, D. Livshits, G. Sokolovskii

引用次数: 0

Abstract

We study gain switching of the broad-stripe InAs/GaAs quantum dot lasers and show that the ratio of ground and excited states emission varies with the lateral position at the laser facet.

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宽条纹InAs/GaAs量子点激光器的增益开关

我们研究了宽条纹InAs/GaAs量子点激光器的增益开关，并表明基态和激发态发射的比值随激光器侧面位置的变化而变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 International Conference Laser Optics (ICLO)

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