A Parametric I/O Model for Modern Storage Devices

Tarikul Islam Papon, Manos Athanassoulis
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引用次数: 12

Abstract

Storage devices have evolved to offer increasingly faster read/write access, through flash-based and other solid-state storage technologies. When compared to classical rotating hard disk drives (HDDs), modern solid-state drives (SSDs) have two key differences: (i) the absence of mechanical parts, and (ii) an inherent difference between the process of reading and writing. The former removes a key performance bottleneck, enabling internal device parallelism, whereas the latter manifests as a read/write performance asymmetry. In other words, SSDs can serve multiple concurrent I/Os, and their writes are generally slower than reads; none of which is true for HDDs. Yet, the performance of storage-resident applications is typically modeled by the number of disk accesses performed, inherently assuming symmetric read and write performance and the ability to perform only one I/O at a time, failing to accurately capture the performance of modern storage devices. To address this mismatch, we propose a simple yet expressive storage model, termed Parametric I/O Model (PIO) that captures contemporary devices by parameterizing read/write asymmetry (α) and access concurrency (k). PIO enables device-specific decisions at algorithm design time, rather than as an optimization during deployment and testing, thus ensuring optimal algorithm design by taking into account the properties of each device. We present a benchmarking of several storage devices that shows that α and k vary significantly across devices. Further, we show that using carefully quantified values of α and k for each storage device, we can fully exploit the performance it offers, and we lay the groundwork for asymmetry/concurrency-aware storage-intensive algorithms. We also highlight that the degree of the performance benefit due to concurrent reads or writes depends on the asymmetry of the underlying device. Finally, we summarize our findings as a set of guidelines for designing storage-intensive algorithms and discuss specific examples for better algorithm and system designs as well as runtime tuning.
现代存储设备的参数化I/O模型
通过基于闪存和其他固态存储技术,存储设备已经发展到提供越来越快的读/写访问。与传统的旋转硬盘驱动器(hdd)相比,现代固态硬盘驱动器(ssd)有两个关键区别:(i)没有机械部件,(ii)读写过程之间存在固有差异。前者消除了一个关键的性能瓶颈,实现了内部设备的并行性,而后者表现为读写性能的不对称。换句话说,ssd可以服务多个并发I/ o,它们的写操作通常比读操作慢;这些都不适用于硬盘。然而,存储驻留应用程序的性能通常由执行的磁盘访问次数来建模,固有地假设读写性能是对称的,并且一次只能执行一个I/O,因此无法准确捕捉现代存储设备的性能。为了解决这种不匹配,我们提出了一种简单而有表达能力的存储模型,称为参数化I/O模型(PIO),它通过参数化读/写不对称(α)和访问并发性(k)来捕获当代设备。PIO在算法设计时实现特定于设备的决策,而不是在部署和测试期间进行优化,从而通过考虑每个设备的属性来确保优化算法设计。我们提出了几种存储设备的基准测试,表明α和k在设备之间有显着变化。此外,我们表明,对每个存储设备使用仔细量化的α和k值,我们可以充分利用它提供的性能,并为不对称/并发感知存储密集型算法奠定基础。我们还强调,由于并发读写而带来的性能优势的程度取决于底层设备的不对称性。最后,我们总结了我们的发现,作为设计存储密集型算法的一组指导方针,并讨论了更好的算法和系统设计以及运行时调优的具体示例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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