Oxide-nitride-oxide antifuse reliability

28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI:10.1109/RELPHY.1990.66084

S. Chiang, R. Wang, J. Chen, K. Hayes, J. Mccollum, E. Hamdy, C. Hu

引用次数: 18

Abstract

Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the 1/E field acceleration model.<>

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氧化物-氮化物-氧化物抗熔丝可靠性

研究了紧凑的低电阻氧化物-氮化物-氧化物(ONO)抗熔断器的时间相关介电击穿(TDDB)、程序干扰、程序抗熔断器电阻稳定性和有效屏蔽。ONO防熔断器优于氧化物防熔断器。在1108个产品单元上累积的180万加速烧坏设备小时中，没有观察到ONO反熔断故障。这与1/E场加速度模型一致

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

28th Annual Proceedings on Reliability Physics Symposium

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