A low voltage 8-T SRAM with PVT-tracking bitline sensing margin enhancement for high operating temperature (up to 300°C)

T. T. Kim, Ngoc Le Ba
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引用次数: 7

Abstract

An 8-Kbit low power 8-T SRAM for high temperature (up to 300°C) applications is presented. Near-threshold operation is selected for minimum performance variations over a wide temperate range. We proposed a PVT-tracking bitline sensing margin enhancement technique to improve the bitline swing and the sensing window. Test chips fabricated in a commercial 1.0-μm SOI technology with high temperature interconnection option demonstrates successful SRAM operation at 2 V, 300°C. The power consumption and access time of 0.94 mW and 256ns was achieved at 2 V and 300°C.
具有pvt跟踪位线传感余量增强的高工作温度(高达300°C)低压8-T SRAM
提出了一种用于高温(高达300°C)应用的8 kbit低功耗8-T SRAM。选择近阈值操作是为了在广泛的温带范围内实现最小的性能变化。提出了一种pvt跟踪位线感知余量增强技术,以改善位线摆动和感知窗口。采用商用1.0 μm SOI技术制造的测试芯片具有高温互连选项,在2 V, 300°C下成功运行SRAM。在2v和300℃下,功耗和存取时间分别为0.94 mW和256ns。
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