Model library for power MOSFETS in switching circuits and converters

Abstract

Macromodels for the power VDMOS transistor are proposed in order to simulate its switching characteristics. These macromodels use the SPICE model library and are established for low voltage (60 V) as well as high voltage (1000 V) devices. Three VDMOS power transistor models have been proposed for the simulation of switching circuits. These have been validated by simulation of some energy conversion systems. One of the proposed models takes into account the effect of temperature on the variations of the device parameters.<>