The electronic behaviour of Si/sub 3/N/sub 4/-GaAs interfaces

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493685

J. Swanson, Q. Wang, M. Bowser

引用次数: 1

Abstract

The static and dynamic behaviours of Si/sub 3/N/sub 4/-GaAs interfaces are described. The possible effects of the passivated surface on device behaviour are considered with relation to devices of current interest.

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Si/sub 3/N/sub 4/-GaAs界面的电子行为

描述了Si/sub 3/N/sub 4/-GaAs接口的静态和动态行为。钝化表面对器件行为的可能影响与当前感兴趣的器件有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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