Digital Signal Processing of Capacitance Transients of Semiconductor Devices and Integrated Circuits

Abstract

The introduction of capacitance deep-level transient spectroscopy methods into the practice of monitoring semiconductor devices and integrated circuits is associated with digital processing of capacitance transients that are weak in relation to noise. In this case, identification of devices’ potential defects is reduced to solving inverse ill-posed problems using a correlation procedure and statistical accumulation of experimental data. The accuracy of the solution significantly depends on the availability of a-priori information, which was obtained at the stage of preliminary experiments. The model of the dependence of the transformed capacitance transient on the repetition rate of deep level filling pulse has been proposed and experimental results have been presented. The processing of the results using this model makes it possible to expand the set of a-priori information for identifying potential defects.