A. C. Peixoto, S. B. Goncalves, A. F. Silva, N. Dias, J. Correia
{"title":"3 mm Deep microelectrode needle array based on aluminum for neural applications","authors":"A. C. Peixoto, S. B. Goncalves, A. F. Silva, N. Dias, J. Correia","doi":"10.1109/ICSENS.2013.6688203","DOIUrl":null,"url":null,"abstract":"This paper presents a simple and cost-effective fabrication method of invasive neural microelectrode arrays based on aluminum, which is a viable alternative to other state-of-the-art technologies that rely primarily on silicon. A 10 × 10 array with 3.0 mm deep reaching pillars were fabricated, each having a pyramidal tip profile. Each aluminum pillar is insulated with a biocompatible layer of aluminum oxide. The electrode tip was covered by an iridium oxide thin-film layer via pulsed sputtering, providing a stable and a reversible behavior for recording/stimulation purposes, each with a 145 Ohm impedance in a wide frequency range of interest (10 Hz-100 kHz). Each pillar is electrically individualized from the adjacent ones by an insulating layer of epoxy resin. High-aspect-ratio pillars (20:1) are achieved through a combination of dicing, thin-film deposition, anodizing and wet-etching. The described approach allows an array of deeper penetrating electrodes and a simpler fabrication procedure when compared to previous works.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE SENSORS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2013.6688203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents a simple and cost-effective fabrication method of invasive neural microelectrode arrays based on aluminum, which is a viable alternative to other state-of-the-art technologies that rely primarily on silicon. A 10 × 10 array with 3.0 mm deep reaching pillars were fabricated, each having a pyramidal tip profile. Each aluminum pillar is insulated with a biocompatible layer of aluminum oxide. The electrode tip was covered by an iridium oxide thin-film layer via pulsed sputtering, providing a stable and a reversible behavior for recording/stimulation purposes, each with a 145 Ohm impedance in a wide frequency range of interest (10 Hz-100 kHz). Each pillar is electrically individualized from the adjacent ones by an insulating layer of epoxy resin. High-aspect-ratio pillars (20:1) are achieved through a combination of dicing, thin-film deposition, anodizing and wet-etching. The described approach allows an array of deeper penetrating electrodes and a simpler fabrication procedure when compared to previous works.