{"title":"An active substrate driver for mixed-voltage SOI systems on a chip","authors":"S. Jackson, B. Blalock, M. Mojarradi, H.W. Li","doi":"10.1109/SSMSD.2000.836451","DOIUrl":null,"url":null,"abstract":"High-voltage transistors in SOI that coexist with traditional low-voltage transistors enable the development of mixed-voltage (high-voltage and low-voltage) systems-on-a-chip. The parasitic back-channel transistor, however, is a critical issue in these mixed-voltage single-chip systems. The presence of high-voltage can create a situation in which the parasitic back-channel device turns on and \"shorts-out\" the top device inducing functional failure of the system. An active substrate driver has been designed that automatically adjusts the substrate bias voltage to a level ensuring the back-channel devices remain off. The active substrate driver should also help compensate for shifts in back-channel transistor threshold voltages induced by temperature, aging, and irradiation effects.","PeriodicalId":166604,"journal":{"name":"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSMSD.2000.836451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High-voltage transistors in SOI that coexist with traditional low-voltage transistors enable the development of mixed-voltage (high-voltage and low-voltage) systems-on-a-chip. The parasitic back-channel transistor, however, is a critical issue in these mixed-voltage single-chip systems. The presence of high-voltage can create a situation in which the parasitic back-channel device turns on and "shorts-out" the top device inducing functional failure of the system. An active substrate driver has been designed that automatically adjusts the substrate bias voltage to a level ensuring the back-channel devices remain off. The active substrate driver should also help compensate for shifts in back-channel transistor threshold voltages induced by temperature, aging, and irradiation effects.