Study of GaSb Valence Band by Magnetoresistance and Hall Effect Measurements at Low Temperature

Abstract

The presence of light and heavy holes in GaSb has been pointed out by Becker et al.[1] and values of their effective masses have been obtained by various authors [2,3,4]. A study is made here of the Hall effect, and the longitudinal and transversal magnetoresistance of p-type GaSb crystals at 4.2 °K, from 0 to 33 kG. Assuming that depopulation of the light-hole band by the field is mainly responsible for the variation of the Hall coefficient and considering isotropic bands tangential at k (000), the densities, mobilities, and effective masses of the two species of holes are deduced.