Introducing Transfer Learning Framework on Device Modeling by Machine Learning

Kota Niiyama, Hiromitu Awano, Takashi Sato
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Abstract

In this study, we propose a novel transistor modeling method using machine learning techniques, with a focus on extrapolation performance. Our method leverages knowledge from a base model that is related to the target model, instead of relying solely on device-specific information. The results show that our approach outperforms other transistor modeling methods based on machine learning, particularly in modeling similar but different transistors that belong to the same device family. Our method was able to reduce the root mean squared error (RMSE) by up to 80.0% compared to other methods.
基于机器学习的设备建模迁移学习框架介绍
在这项研究中,我们提出了一种使用机器学习技术的新型晶体管建模方法,重点关注外推性能。我们的方法利用了与目标模型相关的基础模型的知识,而不是仅仅依赖于特定于设备的信息。结果表明,我们的方法优于其他基于机器学习的晶体管建模方法,特别是在建模属于同一器件家族的相似但不同的晶体管方面。与其他方法相比,我们的方法能够将均方根误差(RMSE)降低高达80.0%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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