MECHANISM OF ORIENTATION SELECTIVITY DURING GRAIN GROWTH OF SECONDARY RECRYSTALLIZATION IN Fe-3%Si ALLOY

Abstract

Selective growth of {110} 〈 001 〉 grains in the temperature gradient annealing has been studied in Fe–3%Si alloy. As grains grow, the average deviation angle from the ideal {110} 〈 001 〉 orientation becomes smaller and orientation distribution changes corresponding to that of coincidence grains in the matrix. Secondary recrystallization temperature depends on the orientation of secondary recrystallized grain and sharper {110} 〈 001 〉 grains grow preferentially at lower temperatures.These phenomena are explained by modified Hillert's model of grain growth. Interfacial energy of coincidence boundary is lower than that of general boundary. Therefore, sharper {110} 〈 001 〉 grains, which have higher frequency of coincidence grains in the primary recrystallized matrix, suffer lower pinning effect from the second phase particles and thus grow preferentially at lower temperatures.