Transistor-less Spin Torque Transfer MRAM design

Abstract

The magnetic random accessible memory (MRAM) is positioned as one of the potential candidates for future universal memory[1]. Although MRAM's endurance outperforms most of the competing technologies, MRAM has not demonstrated strong advantage on area density [2]. Furthermore, recent rapid progress on area density in competing technologies, such as, aggressive scaling on Phase Change Memory [3], multiple-level / multi-bit charge trapping flash memories [4], makes it more important to improve the MRAM array density.