New Generation of High - Power Semiconductor Closing Switches for Pulsed Power Applications

Abstract

Summary form only given. A new generation of semiconductor closing switches based on reverse switched dynistors (RSD) has been developed to switch high-power current pulses with microsecond duration. In this report the results of theoretical and experimental investigations of RSD at peak current more than 500 kA and pulse duration up to 500 mus (at 0.1 Imax) are observed. The criteria of extreme peak current for switch taking into consideration the longtime performance under pulse-periodical mode are gave. The design and test results for switch under single pulse mode at operating voltage up to 25 kV and peak current up to 300 kA are described. The possibility of using such a switch in the ISKRA-6 capacitor bank is estimated.