Design and simulation of AlGaN/GaN HFET

Abstract

GaN material has a very good potential in today's semiconductor world because of its highlighted characters like wide band gap and high saturation velocity. The combined effect of piezoelectric polarization and spontaneous polarization provides a high electron concentration called 2DEG in Al_0.3Ga_0.7N/GaN interface which allows higher mobility of carriers in interface than in bulk GaN material. 2-D simulation of power Al_0.3Ga_0.7N/GaNHFET device is carried out here and the effect of different parameters are analysed and studied using Sentaurus TCAD software. Prameters like I_dV_g, I_dV_d, g_metc are obtained. Several analysis are done with source to gate length, passivation layer etc.