Study on the characteristics for deep-sub-micron grooved-gate PMOSFET

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI:10.1109/HKEDM.2000.904234

Hongxia Ren, H. Yue

引用次数: 0

Abstract

Based on the hydrodynamic energy transport model, using the 2-dimensional device simulator MEDICI, the port electrical characteristics for grooved-gate PMOSFETs are studied at first, and compared with that of counterpart conventional planar PMOSFETs. Then the characteristics are explained in terms of interior physical parameters distribution.

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深亚微米沟槽栅PMOSFET特性研究

基于流体动力能量输运模型，利用二维器件模拟器MEDICI，首先研究了沟槽栅pmosfet的端口电特性，并与传统平面pmosfet进行了比较。然后从内部物性参数分布的角度对其特征进行了解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)

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