FinFET doping with PSG/BSG glass mimic doping by ultra low energy ion implantation

Abstract

A FinFET doping method with PSG/BSG glass mimic doping was presented and a simplified process flow was introduced. Numerical simulation and experiment results of sheet resistance and SIMS profiles indicated a uniform doping of the 3D FinFET structure with the presented method, by using a proper dielectric layer and conducting an optimized subsequent annealing process.