High power four channel IGBT driver IC

Abstract

A solution is presented for the monolithic integration of up to four low side drivers inside full bridge power conversion systems. Inexpensive 1 /spl mu/m high voltage CMOS technology was used in order to keep costs down. It was thus necessary to design special level shifter circuits to facilitate the use of negative turn off voltages. Output currents up to 3.5 A per stage, high insensibility to ESD, soft turn off on short-circuiting, and a complex internal fault management are additional key features. The driver transistors, which are optimized for capacitive loads, control IGBTs up to 1200 V and 150 A per stage.