Rapid modulation of GaAs luminesence intensity using lateral drift with selectable apertures

Abstract

A potential luminesence intensity modulation technique in LED utilizing lateral carrier drift and optical exit apertures has been proposed. An externally applied lateral voltage can dynamically control both the external intensity and the spatial position of a photoluminescence spot from a GaAs region. Lateral drift of the photogenerated electrons from their original position by the electric field resulting from the applied voltage produces these effects. If the bulk of the electrons are transported outside the spatial limits of the area defined to be the exit aperture before recombining the external light emission from the semiconductor is effectively attenuated. This technique, referred to as field aperture selection transport (FAST).