Impact of Device Parameters on the Threshold Voltage of Double-Gate, Tri-Gate and Gate-All-Around MOSFETs

Abstract

Multi-gate (MG)metal-oxide semiconductor field-effect transistors (MOSFETs)are the preferred choice to overcome the limitations of scaling. In this paper, we have investigated the dependency of threshold voltage of Double-gate (DG), Tri-gate (TG) and Gate-All-Around (GAA) MOSFETs on various device parameters. Threshold voltage model of DG MOSFET has been extended to other gate architectures using geometrical transformations. The effort is to compare MG devices using simple and less time consuming mathematical calculations which reproduce the simulated/fabricated results with deviations within 5%.